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IRF3205 MOSFET (Pack Of 3)

  • From source voltage to drain 100V is Vds.
  • ±20V is the gate to source voltage.
  • At 10V, the resistance Rds(on) is 44mohm.
  • 130W of power dissipation Pd at 25°C.

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  • Delivery Charges: Tamil Nadu

₹75 for parcels below 1 Kg and ₹100 for parcels weighing between 1 Kg to 2 Kg.

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₹75

  • Delivery Charges: Other South India

₹125 for parcels below 1 Kg and ₹175 for parcels weighing between 1 Kg to 2 Kg.

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  • Delivery Charges: North India

₹250 for parcels below 1 Kg and ₹325 for parcels weighing between 1 Kg to 2 Kg.

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  • Warranty 1 year

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Description

International Rectifier’s IRF3205 MOSFET is a TO-220AB package-based, 100V single N channel HEXFET power MOSFET. Because of its dynamic dv/dt rating, rugged design, quick switching, and full avalanche rating—as well as its exceptionally low on-resistance per silicon area—power MOSFETs are well recognised for their exceptional efficiency and dependability, which make them suitable for a broad range of applications.

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Image may vary from actual product in terms of Manufacturer/Brand name according to the availability.

Features: 

  • ±20V gate to source voltage
  • 8 mohm on-resistance resistance at 10V voltage gradient
  • 130W of power dissipation (Pd) at 25°C
  • 110A of continuous drain current (Id) at 25°C and Vgs of 10V
  • -55°C to 175°C is the operating junction temperature range.
  • Applications include consumer electronics, industrial, portable devices, and power management.

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