2N3773 – SOLID STATE

The 2N3773 is a high-power NPN silicon transistor designed for general-purpose switching and amplifier applications. It’s commonly used in power amplifiers, power supplies, and other high-current switching circuits. Here are some key specifications:

1. Maximum Collector-Base Voltage (V_CB): Typically around 160V.
2. Maximum Collector-Emitter Voltage (V_CE): Typically around 140V.
3. Maximum Collector Current (I_C): Typically around 16A.
4. Power Dissipation (P_D): Typically around 150W.
5. Gain (h_FE): Typically around 5-60.

The 2N3773 comes in a TO-3 metal can package, which provides good thermal conductivity for heat dissipation, making it suitable for high-power applications where heat management is important. It’s worth noting that the 2N3773 is a bipolar junction transistor (BJT), which operates by controlling the flow of current between its collector and emitter terminals using a small current applied to the base terminal.

Overall, the 2N3773 is a robust and widely used transistor in various high-power electronic circuits, thanks to its high current and voltage ratings.

Note:
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